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Multi-gate FinFET Mixer Variability assessment through physics-based simulation

机译:通过基于物理的模拟进行多栅极FinFET混合器可变性评估

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摘要

In this paper we show that innovative physics-based simulations can be used for a comprehensive analysis of RF stages subject to random variations of technological parameters, including the computation of the average (deterministic) RF performance along with their statistical deviation. The variability analysis is addressed by means of the recently developed physicsbased sensitivity analysis of AC parameters through Green's functions [1], [2]. To demonstrate the technique, we address the analysis of a FinFET mixer exploiting an innovative Independent Gates topology, showing that a careful design allows to maximize the mixer conversion gain while minimizing its variability vs. several physical parameters, such as the gate length, oxide thickness and fin width.
机译:在本文中,我们证明了基于物理学的创新模拟可用于对受技术参数随机变化影响的射频级进行全面分析,包括计算平均(确定性)射频性能及其统计偏差。通过格林函数[1],[2],通过最近开发的基于物理学的交流参数敏感性分析,可以解决变异性分析问题。为了演示该技术,我们通过创新的Independent Gates拓扑结构解决了FinFET混频器的分析问题,表明精心的设计可以使混频器转换增益最大化,同时最大程度地降低其可变性与几个物理参数(如栅极长度,氧化物厚度)之间的差异。和鳍的宽度。

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